Power semiconductors are the core components of power electronics. They are transitioning from traditional silicon to materials like silicon carbide (SiC) and gallium nitride (GaN), which combine large bandgaps with high mobility.
These compound semiconductors are used in power devices that can operate at high temperatures due to their material properties. Therefore, packaging technology must be reliable in high-temperature environments.
OKUNO can improve the performance of such semiconductor devices with our long-cultivated electroless plating technology.
TOTAL PROCESS:
Electroless plating process for Direct Copper Bonding (DCB) dielectric ceramic substrates
TOTAL PROCESS:
Electroless plating process for Aluminum Active Metal Brazed (AMB) dielectric ceramic substrates
Remove dirt from the surface of aluminum sputtering films.
Etch the surface of aluminum sputtering films to remove oxidized films.
Cleaning and etching can be conducted at the same time by TORYZA ALC series.
Enhance the wettability of aluminum electrode surfaces to promote dense form formation in the subsequent zincate process.
Remove smut and insoluble matters remaining on aluminum electrode surfaces.
Form a dense zincate film on aluminum electrode surfaces.
Dissolve the first zincate film.
Make a uniform oxide film that conforms to the surface shape, to promote dense film formation in the second zincate process.
Form an even denser film on the aluminum electrode surface than the one produced in the first zincate step.
Immerse into an electroless nickel plating solution containing nickel salts, reducing agents, and chelating agents. Nickel deposits by immersion reaction with zinc, and plating progresses through a self-catalytic reaction, forming a dense nickel film.
Obtain a palladium plating film with excellent heat resistance and barrier properties.
Obtain a gold plating film with excellent solder wettability, solder joint performance, gold wire bonding performance.
